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Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

机译:IngaN激光二极管动态的时间分辨扫描近场显微镜

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We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 μm narrow and a 10 μm wide ridge waveguide laser diode.
机译:我们将扫描近场显微镜(SNOM)与时间分辨检测方案相结合,以测量在405nm处发射的InGaN激光二极管的模式动态。观察到的现象是长丝,模式竞争,近场相动,近场到远场传播和基板模式。在本文中,我们详细描述了专门用于这些研究的自建SnOM。我们还提供了使用管蚀刻的SNOM尖端制备的配方。然后,我们将模式动态进行比较3μm窄和10μm宽脊波导激光二极管。

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