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Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

机译:InGaN激光二极管动力学的时间分辨扫描近场显微镜

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摘要

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3μm narrow and a 10 μm wide ridge waveguide laser diode.
机译:我们将扫描近场显微镜(SNOM)与时间分辨检测方案结合在一起,以测量在405 nm处发射的InGaN激光二极管的模式动态。观察到的现象是灯丝,模式竞争,近场相位动力学,近场到远场传播以及基板模式。在本文中,我们将详细介绍专门用于这些研究的自建SNOM。我们还提供使用管蚀刻进行SNOM尖端制备的配方。然后,我们比较了3μm窄和10μm宽的脊形波导激光二极管的模式动力学。

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