Dielectric nanocavity for the emission control of a single-photon source

摘要

In this work, we numerically investigate a dielectric nanocavity composed of gallium phosphide nanocylinders. Our results demonstrate that proposed structures allow to increase the emission rate into zero phonon line of NV-center by a factor of 10. We compare properties of cavities made of crystalline silicon and gallium phosphide. Obtained parameters of the nanocavity are suitable for nanodiamonds with NV or SiV color centers and adopted for the existing lithography methods. We believe the proposed system is perspective for creation of a quantum nanophotonic chip for application in quantum telecommunication and quantum computing.