首页> 外国专利> METHOD OF PARAMETER MEASUREMENT FOR SINGLE-PHOTON INFRARED BAND EMISSION SOURCES

METHOD OF PARAMETER MEASUREMENT FOR SINGLE-PHOTON INFRARED BAND EMISSION SOURCES

机译:单光子红外波段发射源的参数测量方法

摘要

FIELD: measuring instrumentation.;SUBSTANCE: parameters of emission source are measured by single-photon superconductor detector. To implement the method, mean number of counts and number of dark responses of detector are measured. Number of photons registered is determined as a difference between mean number of counts and number of dark responses. Emission power is determined by multiplying number of registered photons by photon energy divided by quantum efficiency of emission receiver.;EFFECT: enhanced measurement accuracy and possible measurement of small power emission.;2 cl, 6 dwg
机译:领域:测量仪器;实质:用单光子超导探测器测量发射源的参数。为了实现该方法,测量了探测器的平均计数和暗响应的数量。确定的光子数确定为平均计数数与暗响应数之间的差。发射功率是通过将注册光子数乘以光子能量除以发射接收器的量子效率来确定的;效果:增强的测量精度并可能测量小功率发射; 2 cl,6 dwg

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号