Analysis of Radiation Impact on Memristive Crossbar Arrays

摘要

Memristive crossbar architecture with high device density is the most preferred structure to realize memristor based in-memory computing system. Typically, synthesized gate-level netlist of NOR and NOT gates is mapped to the memristive crossbar architecture to realize a given logic function. We analyze the impact of radiation induced Single Event Transients (SETs) on such architectures. CMOS drivers are used to drive the wordline and bitline of the memistor array. These drivers are susceptible to incident particle strikes. The SETs generated can result in undesirable effects while executing a logic function. We also analyze SET induced crosstalk noise due to interconnect coupling effects in the array. Detailed SPICE level simulations on crossbar array has shown SETs resulting from single and multiple particle strikes can worsen the execution delay of NOR/NOT gate, trigger state drift in memristor(s), or flip memristor state (i.e., single event upset). For example, for single particle strike with LET 50, the memristor delay worsened by 5X.