Reset-voltage-dependent precise tuning operation of TiO_x/Al_2O_3 memristive crossbar array

摘要

In this Letter, we present reset-voltage-dependent precise tuning operation of TiO_x/Al_2O_3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiO_x/Al_2O_3-based memristors in areas requiring highly accurate tuning characteristics.