Centroid and Inversion Charge Model for Long Channel Strained-Silicon GAA MOSFET with Quantum Effect

摘要

This paper presents a modelling approach for centroid and inversion charge of strained GAA MOSFET. Such analysis is essential to study the impact of the quantum effect on the device which involved with aggressive scaling of the radius of the channel and oxide layer thickness. In order to study the quantum effect in strained silicon GAA MOSFET, the Poisson-Boltzmann theorem and explicit modelling technique are used to conduct the analysis related to centroid and inversion charge. Quantum effects are integrated into the proposed model by introducing the quantum threshold and capacitance in term of centroid charge. The Bohm Quantum Model (BQP) is used to accommodate the quantum effect in the simulator. Our explicit model is in good agreement with the numerical simulator, for various strain level and centroid charge displacement. It is found that the inversion charge changed linearly with strain level. Besides, the doping level and radius of the device contributed to the changes of centroid charge displacement from the silicon-oxide interface to the center of the channel.