A Complete Model of Gate Controlled Lateral PNP Devices in CMOS Technology Valid in All Regions of Operation

摘要

This paper presents a complete model of a gated lateral PNP transistor in CMOS technology covering all modes of operations - vertical and lateral BJTs as well as the MOSFET regions of operations seamlessly. A sub-circuit model combining p-MOSFET, lateral PNP and vertical PNP is presented. The sub-circuit model accounts for high- and low-beta regions of the lateral BJT, MOSFET operation and vertical PNP BJT including temperature dependence for all the devices. A novel phenomenon of the increase in reverse (positive) base current with increasing magnitude of the emitter-base forward bias is explained and modeled, for the first time. The benefit that the lateral BJT brings to the implementation of bandgap reference circuits is discussed.