A CMOS-based Resistive Crossbar Array with Pulsed Neural Network for Deep Learning Accelerator

摘要

A CMOS-based resistive computing element (RCE), which can be integrated in a crossbar array, is presented. The RCE successfully solves the hardware constraints of the existing memristive devices such as dynamic ranges of conductance, I-V nonlinearity, and on/off ratio without increasing hardware complexity compared to other CMOS implementations. The RCE has been designed using a 65nm standard CMOS process and SPICE simulations have been performed to evaluate feasibility and functionality of the RCE. In addition, a pulsed neural network employing an RCE crossbar array has also been designed and simulated to verify the operation of the RCE.