Influence of UV light on the increase of SiNx conductivity toward elucidation of potential induced degradation mechanism

摘要

This research focused on the influence of ultraviolet (UV) light on the increase of conductivity properties of SiN_x layers, which are utilized as an anti-reflective coating to improve the light absorption in silicon solar cells. We found that the SiN_x conductivity increases significantly under the UV light, but it depends on the SiN_x refractive index and is limited by SiN_x bandgap. In this research, the correlation of the increase of SiN_x conductivity with potential induced degradation (PID) for silicon solar cell was also discussed and proposed.