Effect of PECVD a-Si Growth Temperature on the Performance of a-Si/c-Si Solar Cells

摘要

In this work the effect of PECVD a-Si growth temperature on the performance of a-Si/c-Si solar cells is studied. Phosphorus doped amorphous silicon was deposited using PECVD at three different temperatures: 150 °C, 200 °C, and 250 °C. A thin film ALD deposited ZnO is used as the anti-reflective coating. Optical and electrical characterization of the samples is carried out, including: ellipsometry, quantum efficiency, reflectance, and current-voltage measurements. Results indicate that cells with emitter layer grown at 200 °C have the highest current density under 1 sun, along with better external quantum efficiency at wavelengths above ~450 nm.