Optical Kerr Nonlinearity of CMOS Compatible PECVD Deposited Si-Rich-Nitride (SRN)

摘要

CMOS compatible silicon-rich-nitride (SRN) with high reflective index is deposited by plasma enhanced chemical vapor deposition. The Kerr nonlinearity n2 of SRN waveguide is measured and extracted with a value of 2.8×10⁻¹⁷ m²W⁻¹, which is one order of magnitude higher than Si waveguides.