Gallium and Aluminum co-doped Zinc Oxide (GAZO) films were prepared by in-line sputtering at room temperature. After that, the GAZO films were treated with different treatment time of microwave hydrogen plasma. The treatment time of microwave hydrogen plasma varied from 1 to 10 minutes. The surface roughness of GAZO films increases with the treatment time and was observed from scanning electron microscope. The increase of surface roughness can be attributed to re-crystallization of GAZO films after microwave hydrogen plasma treatment. Microwave hydrogen plasma annealing can improve the electrical and optical properties of GAZO films. The 5.6 × 10 ~4Ω-cm in electrical resistivity and 93% in average optical transmittance with visible wavelength region can be obtained for GAZO films after microwave hydrogen plasma treatment of 5 minutes.
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