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Electromagnetic Analysis of MEMS-Based Tunable EBG Bandstop Filter Using RF MEMS Switch for Ku-Band Applications

机译:基于RF MEMS开关的Ku频段基于MEMS的可调谐EBG带阻滤波器的电磁分析

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This paper presents an electromagnetic analysis of EBG Bandstop filter integrated with RF MEMS switch. The transmission line theory in microwave technology is used to analyze the proposed structure by studying isolation parameter of the filter. A fixed-fixed switch with low pull-in voltage of 4.05 V is designed and integrated on the signal line which is equidistant from the two EBG structures of filter. The filter resonates at 14.05 GHz without integrating the switches and is shifted to 15.85 GHz due to upstate capacitance of 41.56 μF when integrated with the switch at on-state. The frequency is tuned to 15.27, 14.5 and 11.4 GHz by actuating the beam to displace about 1, 2 and 3 μm. The switch produces a downstate capacitance of 19.11 pF during offstate and tunes the resonant frequency to 11.4 GHz. Thus, the tuning of the proposed EBG Bandstop filter is achieved by using RF MEMS switches and is efficiently used for Ku-band applications. The proposed electromagnetic analysis is carried out using HFSS 13.0v FEM tool.
机译:本文介绍了集成有RF MEMS开关的EBG带阻滤波器的电磁分析。通过研究滤波器的隔离参数,利用微波技术中的传输线理论对所提出的结构进行了分析。设计并集成了一个低固定电压4.05 V的固定开关,该开关集成在信号线上,该信号线与滤波器的两个EBG结构等距。滤波器在不集成开关的情况下在14.05 GHz处谐振,并且由于在接通状态下与开关集成时的41.56μF的上行电容而移至15.85 GHz。通过激励光束位移约1、2和3μm,将频率调谐到15.27、14.5和11.4 GHz。开关在关断状态下会产生19.11 pF的下降状态电容,并将谐振频率调谐至11.4 GHz。因此,所提出的EBG带阻滤波器的调谐是通过使用RF MEMS开关实现的,并有效地用于Ku波段应用。建议的电磁分析是使用HFSS 13.0v FEM工具进行的。

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