Impact of Temperature on Threshold Voltage Self Heating in Ultra Thin SOI MOSFET

摘要

In this paper we carried out characterization of the effect of temperature effect in scaled ultra thin SOI MOSFET. In ultra thin devices threshold voltage is influenced by the thickness of silicon film and doping concentration in channel. Self heating is challenging issue for ultra thin SOI MOSFET and we investigated the characterization of the self heating effect on drain current in Saturation region and its achieved by varying V_DS and V_GS.