Novel CMOS active inductor for tunable RF circuits

摘要

Future wireless transceivers must support several communication standards with low-cost, low-area and low power consumption. In this letter, a novel wide tunable CMOS active inductor dedicated to RF circuits for multistandard applications is presented. Only negative transconductors are considered in the proposed gyrator instead of the conventional one. To save the silicon area, the new active inductor is implemented employing puch-pull amplifier cells as negative transconductors. Using a 0.13- μm CMOS technology, the obtained simulation results (a) show a wide frequency range inductive behavior with high self resonance frequency. High quality factors are reached with good agility while covering the frequency range of 2 to 2.6 GHz and consuming a dc power of 0.9 to 1.3mW from 1 V of supply voltage.