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Variation-aware widely tunable nanoscale design of CMOS active inductor-based RF bandpass filter

机译:基于CMOS有源电感器的RF带通滤波器的可感知变化的广泛可调纳米级设计

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This paper presents a novel design methodology for realizing a variation-aware widely tunable active inductor-based RF bandpass filter (BPF). The inductor-less filter is designed and implemented using voltage differencing transconductance amplifier (VDTA) as an active building block and a grounded capacitor, thereby validating its suitability for fully integrated circuit applications. Digital coarse' tuning and analog fine' tuning are employed to achieve better frequency coverage. The designed filter exhibits a tuning range of 1.65-3.015GHz and a 3-dB bandwidth of 1400-122MHz which translates into a quality factor of 1.17-24.71. It offers a voltage gain of 0-22.91dB, noise figure of 28.16-28.95dB, has a 1-dB compression point of 2.50-2.478dBm and draws 0.065-0.232mW power from 1-V power supply. Our proposed design shows a figure-of-merit of 82.08-91.27dB, which is higher as compared to its counterparts available in the literature. The filter is implemented in 45-nm CMOS technology node using metal gate and strained silicon. Copyright (c) 2017 John Wiley & Sons, Ltd.
机译:本文提出了一种新颖的设计方法,用于实现可感知变化的,广泛可调的基于有源电感的射频带通滤波器(BPF)。无电感滤波器的设计和实现使用了压差跨导放大器(VDTA)作为有源模块和接地电容器,从而验证了其适用于全集成电路应用。采用数字粗调和模拟精调来实现更好的频率覆盖。设计的滤波器具有1.65-3.015GHz的调谐范围和1400-122MHz的3dB带宽,这转化为1.17-24.71的品质因数。它提供0-22.91dB的电压增益,28.16-28.95dB的噪声系数,1dB的压缩点2.50-2.478dBm,并从1V电源吸收0.065-0.232mW的功率。我们提出的设计显示的品质因数为82.08-91.27dB,比文献中的同类产品更高。该滤波器使用金属栅极和应变硅在45纳米CMOS技术节点中实现。版权所有(c)2017 John Wiley&Sons,Ltd.

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