Fast local registration measurements for efficient e-beam writer qualification and correction

摘要

Mask data are presented which demonstrate local registration errors that can be correlated to the writing swathes of state-of-the-art e-beam writers and multi-pass strategies, potentially leading to systematic device registration errors versus design of close to 2nm. Furthermore, error signatures for local charging and process effects are indicated by local registration measurements resulting in systematic error, also on the order of 2nm.