Experimental Analysis of Self-Heating Effects Using the Pulsed IV Method in Junctionless Nanowire Transistors

摘要

This paper discusses the occurrence of self-heating in Junctionless Nanowire Transistors, observed through drain current degradation in the transient regime. The analysis is made by performing experimental measurements using the Pulsed IV method in transistors with varied dimensions. It is shown that the junctionless nanowire's susceptibility to self-heating is not high enough to significantly affect the transistor's characteristics, where for all cases current degradation lower than 4.5% is seen.