Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

摘要

Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/μm and current fluctuation of ~1.4%.