Micro-photoluminescence imaging of dislocation generation in 0.18μm power semiconductor devices with deep trenches

摘要

Micro Photoluminescence Imaging was used to identify the impact of thermal steps on dislocation density associated with Deep Trench Isolation. Previous work showed gate oxide failure due to slip associated with dislocations from the deep trenches. Micro Photoluminescence Imaging demonstrated capability to observe dislocation generation caused by thermally induced stress during processing of Deep Trench Isolation (DTI) wafers.