Improved performance of new fast recovery high voltage diode chip set of 3.3kV and 6.5kV

摘要

In this paper, the development of fast recovery 6.5 and 3.3 kV diode chip integrated in IGBT module is presented. Based on Dynex MAX-SOA technology, the newly developed diode chip set integrated in high power IGBT module exhibits a wider range of reverse recovery safe operating area where conduction and reverse recovery characteristics have been optimized.