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Substrate Temperature and Bias Voltage Dependent Properties of Sputtered AlN Thin Films for BAW Applications

机译:用于BAW应用的溅射AlN薄膜的衬底温度和偏置电压相关特性

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We investigated the influence of substrate temperature and biasing during reactive DC magnetron sputter deposition on the properties of aluminum nitride thin films for bulk acoustic wave applications. We demonstrate that higher substrate temperatures of up to 400°C result in thin films with improved crystallographic properties and smoother surfaces. In addition, the application of increased bias voltage levels during deposition allow to tailor the film stress over a wide range.
机译:我们研究了反应堆直流磁控溅射沉积过程中衬底温度和偏压对体声波应用中氮化铝薄膜性能的影响。我们证明了高达400°C的更高基板温度会导致薄膜具有改善的晶体学性质和更光滑的表面。另外,在沉积期间施加增加的偏置电压电平允许在宽范围内调整膜应力。

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