Damage recovery and strain induced by Phosphorous in laser annealed Ge

摘要

Since the early 2000s, there is a renewed interest in the use of Ge in the microelectronics industry, not only as a possible high-mobility substitute for Si in the mainstream CMOS technology but also as a candidate for the fabrication of active photonic devices. For these applications, highly doped and defect free regions must be combined with tensile strain either to reduce the access resistance or to induce the formation of a direct bandgap in photonic devices.