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Damage recovery and strain induced by Phosphorous in laser annealed Ge

机译:激光退火的磷诱导的损伤回收和菌株

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摘要

Since the early 2000s, there is a renewed interest in the use of Ge in the microelectronics industry, not only as a possible high-mobility substitute for Si in the mainstream CMOS technology but also as a candidate for the fabrication of active photonic devices. For these applications, highly doped and defect free regions must be combined with tensile strain either to reduce the access resistance or to induce the formation of a direct bandgap in photonic devices.
机译:自2000年代初以来,在微电子工业中使用GE的利益,不仅是作为主流CMOS技术的可能的高迁移率替代,而且作为用于制造有源光子器件的候选者。对于这些应用,高掺杂和缺陷的自由区域必须与拉伸应变结合,以减小进入电阻或诱导光子器件中的直接带隙的形成。

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