Thermal Boundary Conductance Mapping at Metal-MoSe2Interface

摘要

Increasing power density in the microelectronic devices has led to thermal management concerns to ensure efficient, reliable, and long-term operation. As device dimensions continue to decrease, the interfaces of dissimilar materials (e.g., metal-semiconductor) may limit heat removal from the device active region. Improving the thermal transport across interfaces is a necessary consideration during the design process and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. In addition, low-dimensional materials, such as 1D nanotubes and nanowires and 2D sheets, have attracted considerable interest because of their unique physical properties and small footprint. Two-dimensional transition metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal-TMD electrical contact resistance, but the thermal properties have received much less attention. We measured and analyzed the TBC across Al-Ti-MoSe₂-SiO₂interface using time-domain thermoreflectance. The results are an order of magnitude larger than previously reported values at MoSe₂-Au interfaces, but still near the low end for typical metal-semiconductor interfaces.