A High Precision Bandgap Voltage Reference with MOS Transistor Curvature Compensation in 65-nm CMOS Process

摘要

In this paper, a novel CMOS bandgap reference (BGR) with high-order curvature compensation by employing only a MOS transistor operating in strong-inversion deep-triode region is proposed. The mechanism of the compensation technique is analyzed in detail and the BGR is designed in standard 65-nm CMOS process. The simulation results show that the presented BGR achieves a temperature coefficient (TC) of 9.8 ppm/°C over the temperature range of -20°C to 150°C at 2.5V supply voltage. And a high precision reference voltage of 1.2V is obtained under room temperature (27°C). The line regulation is 0.33%/V in the supply voltage ranging from 1.8 to 3.6V. Comparing with the conventional circuit, the proposed architecture improves the accuracy over temperature and saves the chip area effectively.