AIGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance

摘要

This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μA/mm at -20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.