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Improved on-state performance of AIGaN/GaN Fin-HEMTs by reducing the length of the nanochannel

机译：通过减少纳米通道的长度，改善了AIGaN / GaN Fin-HEMT的通态性能

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摘要

In this letter, AIGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and characterized. The drain current density, transconductance, and on-resistance were improved by reducing the length of the nanochannel, which was attributed to the modulation of access resistance by changing the length of the nanochannel. The threshold voltage shifted to the positive direction with the decrease in the width of the nanochannel and showed the independence on the length of the nanochannel. With the reduction in the length of the nanochannel, the gate swing was increased by suppressing the increase of source resistance, improving the linearity of transconductance.
机译：在这封信中，制造并表征了具有不同纳米通道几何参数的AIGaN / GaN Fin-HEMT。通过减少纳米通道的长度可以改善漏极电流密度，跨导和导通电阻，这归因于通过改变纳米通道的长度来调节访问电阻。随着纳米通道宽度的减小，阈值电压向正方向偏移，并显示出纳米通道长度的独立性。随着纳米通道长度的减小，通过抑制源极电阻的增加来增加栅极摆动，从而改善了跨导的线性度。

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  • 来源
    《Applied Physics Letters》 |2017年第19期|193502.1-193502.5|共5页
  • 作者

    Meng Zhang; Xiao-Hua Ma; Min-Han Mi; Yun-Long He; Bin Hou; Jia-Xin Zheng; Qing Zhu; Li-Xiang Chen; Peng Zhang; Ling Yang;

  • 作者单位

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China ,School of Mechano-electric Engineering, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

    School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, People's Republic of China ,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China;

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