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X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain

机译:针对基于GaN的相控阵雷达发射链而优化的X波段GaAs相位驱动器MMIC

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In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.
机译:在大功率相控阵雷达的发射链中,越来越多地使用氮化镓(GaN)大功率放大器(HPA),而在接收链中,则有向集成硅(Si)转移的趋势。基础组件。 GaN放大器通常需要较高的输入功率,因此必须包括中功率驱动器放大器。对于相控阵操作,还需要发射链中的移相器。本文介绍了集成移相驱动器MMIC的设计和测量结果,并对其进行了优化,以直接驱动X波段GaN HPA。低成本塑料QFN封装可降低前端模块组装的成本。已实现QFN封装的MMIC具有6位数字移相器,在8至11 GHz的5 dBm的源功率下,CW输出功率超过22 dBm。在此带宽上,测得的RMS相位误差小于5°。

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