Monolithically Integrated E-mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching

摘要

This paper presents the design of a gate driver, monolithically integrated with power p-gate Gallium Nitride High Electron Mobility Transistor (p-GaN HEMT). It is implemented by an enhancement mode GaN-on-SOI (Silicon on Insulator) technology. Circuit-level simulations considering parasitic components in the integrated circuit (IC) verify the switching operation at 10 MHz, 50 V of off-state V_DS and 10 A of on-state I_D. GaN-HEMT model has been calibrated by experimental results. The simulation results shows that the proposed gate driver realizes 3.8/3.4 ns of turn on/turn off time, which are 89.0/78.9% smaller than a discrete gate driver.