A 600 V high voltage gate driver IC with excellent allowable negative V-S bias capability for E-mode GaN power devices

摘要

In this paper, a 600 V high voltage gate driver IC with excellent allowable negative V-S bias capability is proposed. In order to prevent the bootstrap capacitor from overcharging, a voltage signal from negative voltage sensor is utilized to control the charging path of it when the negative voltage in V-S is detected. A bilevel isolated bootstrap circuit is utilized for the level shifter and the subsequent circuit, respectively. It guarantees the normally functions even when V-S is lower than - VCC. The proposed 600 V gate driver IC is fabricated in 0.5 mu m 600 V Bipolar-CMOS-DMOS process. Measured results show that its basic function is normal even when Vs = - 6 V at 5 V power supply voltage. The quiescent current when Vs = - 6 V is 40.63 mu A, which is approximately same with it when V-S = 0 V.