High Speed, Low Matchline Voltage Swing and Search Line Activity TCAM Cell Array Design in 14 nm FinFET Technology

摘要

To design cost and energy efficient memory cell various designs are introduced in recent days. The power consumed by the memory cell array is reduced at nanometer scale but increases if frequency of operation increases. The search operation consumes more power and to reduce it TCAMs were introduced which compares entire data with search bit in single clock cycle. In past TCAMs were designed using MOSFET devices. These devices suffer from second order effects below 45 nm. This paper presents a FinFET based TCAM cell array designed in 14 nm technology. The memory device proposed works faster, has Low Matchline Voltage Swing and Search Line Activity. The proposed FinFET design is efficient when compared to CMOS methods where a 93.3 and 96% less power is obtained. An energy reduction of 10.97 and 60.08% is observed when compared to existing method 1 and 2 respectively.