Suppressed Shot Noise of RF Short–Channel MOSFETs

摘要

The suppressed characteristics of shot noise of 40nm n-MOSFETs in high-frequency band are observed by modeling and measuring its drain current noise. On the basis of the analysis of the microelectronic physical structure of 40nm MOSFETs, a concise model for the drain current noise of the device is built according to the extraction results of the small signal equivalent circuit parameters. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it disappears.