3D GaN Power Switching Electronics: A Revival of Interest in ELO

摘要

We reported the first-time utilization of ELO (epitaxial lateral overgrowth) GaN (gallium nitride) for power diodes. The undesired stage of coalescence related to ELO is avoided by virtue of a novel 3D device architecture built on the ELO GaN islands on foreign substrate which features pure-lateral p-n and n^{+ -n-junctions and electrodes lying on the opposing sidewalls of the island. Excellent electrical performance was demonstrated, revealing a strong potential of ELO GaN with 3D device architecture for power switching applications.}