Ultra-High-Sensitivity photodetector from ultraviolet to visible based on Ga-doped In2O3 nanowire phototransistor with top-gate structure

摘要

High-performance Ga-doped In2O3 nanowire phototransistor based on top-gate structure was fabricated with gate dielectric is SiO2. By adjusting gate voltage of the phototransistor, the device can detect extremely weak ultraviolet light, with high responsivity (R) and large light-dark current ratio $(mathrm{I}_{ext{ph}}/mathrm{I}_{ext{dark}})$. For example, its responsivity can reach 580 $mathrm{A}/mu mathrm{W}$ and $mathrm{I}_{ext{ph}}/mathrm{I}_{ext{dark}}$ is maintained at~ 10^5 with 300 nm illumination (0.0 15 $mumathrm{W}/$ cm^2),