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Plasma Dicing Fully Integrated Process-Flows Suitable for BEOL Advanced Packaging Fabrications

机译:等离子切割完全集成的工艺流程,适用于BEOL高级包装制造

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Comprehensive investigations were conducted on identifying integration efforts needed to adapt plasma dicing technology in BEOL pre-production environments. First, the authors identified the suitable process flows. Within the process flow, laser grooving before plasma dicing was shown to be a key unit process to control resulting die sidewall quality. Significant improvement on laser grooving quality has been demonstrated. Through these efforts, extremely narrow kerfs and near ideal dies strengths were achieved on bare Si dies. Plasma dicing process generates fluorinated polymer residues on both Si die sidewalls and under the topography overhangs on wafer surfaces, such as under the solder balls or microbumps. Certain areas cannot be cleaned by in-chamber post-treatments. Multiple cleaning methods demonstrated process capability and compatibility to singulated dies-on-tape handling. Lastly, although many methods exist commercially for backmetal and DAF separations, the authors' investigation is still inconclusive on one preferred process for post-plasma dicing die separations.
机译:对确定BEOL预生产环境中的等离子切割技术所需的整合工作进行了全面调查。首先,作者确定了合适的流程。在工艺流程中,等离子切割之前的激光开槽被证明是控制所得管芯侧壁质量的关键单元工艺。激光开槽质量得到了显着改善。通过这些努力,在裸硅模具上获得了非常窄的切口和接近理想的模具强度。等离子体切割工艺会在硅管芯侧壁和晶圆表面的形貌悬垂下(例如在锡球或微凸块下)产生氟化聚合物残留物。某些区域无法通过室内后处理进行清洁。多种清洁方法证明了其工艺能力以及与单条带上管芯处理的兼容性。最后,尽管商业上有许多方法用于背金属和DAF分离,但作者对等离子后切割芯片分离的一种优选方法的研究尚无定论。

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