Photoluminescence for in-line buried defects detection in silicon devices

摘要

In this work, a novel imaging photoluminescence-based metrology method is introduced, with potential application to buried defect detection in silicon devices during semiconductor manufacturing process. The theoretical and practical aspects are both discussed. A new metrology tool was realized and thoroughly tested through real-life semiconductor samples to reveal the capabilities of the suggested method. According to the results, defects down to the sub-micron size range can be optically detected, as confirmed by cross-sectional transmission electron microscopy images.