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Ultra-thin ALD MGO membranes as mems transmission dynodes in a timed photon counter

机译:超薄ALD MGO膜在定时光子计数器中作为记忆传递打拿极

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In this work we demonstrate how a novel single free electron detector “Timed Photon Counter” (TiPC) may benefit from ultra-thin MgO transmission dynodes (tynodes). These membranes are fabricated through MEMS process technologies, with atomic layer deposition (ALD) as the most apt technique for growing films of good quality, with excellent control over thicknesses and extremely low surface roughness. Large area arrays of ultra-thin (5-25 nm) free-standing MgO membranes are fabricated and characterized to determine the optimal thickness for application of ALD MgO in TiPC. Supremacy of MgO over other materials previously considered, such as SiN, Al2O3, SiC, Si is verified. The exceptional mechanical (low stress in particular, -200 MPa), chemical and electrical properties of MgO make this material a very attractive candidate for numerous MEMS applications, as the MEMS transmission dynodes in the timed photon counter.
机译:在这项工作中,我们演示了新型的单自由电子探测器“定时光子计数器”(TiPC)如何从超薄MgO传输打拿极(倍增极)中受益。这些膜是通过MEMS工艺技术制造的,其中原子层沉积(ALD)是最合适的技术,用于生长质量优良,厚度控制极好且表面粗糙度极低的薄膜。制作了大面积超薄(5-25 nm)自立式MgO膜阵列,并对其特性进行了确定,以确定在TiPC中应用ALD MgO的最佳厚度。验证了MgO在先前考虑的其他材料(如SiN,Al2O3,SiC,Si)上的优越性。 MgO具有出色的机械性能(特别是低应力,-200 MPa),化学和电学特性,使其成为众多MEMS应用的极具吸引力的候选材料,因为定时光子计数器中的MEMS传输打拿极也是如此。

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