Resistivity reduction of low-carrier-density sputtered-MoS2 film using fluorine gas

摘要

High-performance and low-power LSIs have been achieved by 3D transistor such as FinFET in logic and DRAM using crystalline-silicon channel and 3D-stacked devices in NAND flash using poly-crystalline-silicon channel. For the future, monolithic transistors using atomic-layer materials are expected above the silicon devices. A transition-metal di-chalcogenide (TMDC) such as molybdenum di-sulfide (MoS) is one of the promising candidates because of not only a higher mobility but also attractive functionalities such as flexibility and transparency. However, it is very difficult to reduce a contact resistance, especially using doping. In this paper, a first-principle simulation has been studied in advance, and a fluorine-gas process has been subsequently investigated to reduce the contact resistance.