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Influence of technological conditions on optical and structural properties of molybdenum oxide thin films

机译:工艺条件对氧化钼薄膜光学和结构性能的影响

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摘要

MoO_x thin films were deposited are deposited by DC reactive magnetron sputtering at different technological conditions. Structural, electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the MoO_x films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had w-type of conductivity. Based on the dependences α = f(hv), the presence of direct allowed interband optical transitions in the MoO_x thin films is established and the optical band gap values are determined.
机译:在不同的工艺条件下,通过直流反应磁控溅射沉积MoO_x薄膜。研究了薄膜的结构,电学和光学性质。在温度T÷295-420 K的范围内测量了MoO_x膜电阻R的温度依赖性。已确定所有研究样品均具有w型电导率。根据相关性α= f(hv),确定MoO_x薄膜中存在直接允许的带间光学跃迁,并确定光学带隙值。

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