Hot carrier reliability in LDMOS devices

机译：LDMOS器件中的热载流子可靠性

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This paper discusses hot carrier (HC) reliability in LDMOS devices. First we review various HC degradation mechanisms for LDMOS devices. Then we discuss how to reduce HC degradation in LDMOS devices.

机译：本文讨论了LDMOS器件中的热载流子（HC）可靠性。首先，我们回顾一下LDMOS器件的各种HC降解机制。然后，我们讨论了如何减少LDMOS器件中的HC降解。

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《IEEE International Conference on ASIC》|2017年|658-661|共4页
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Jifa Hao;
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Degradation; Silicon compounds; Hot carriers; Stress; Logic gates; MOSFET; Standards;

机译：降解;硅化合物;热载流子;应力;逻辑门; MOSFET;标准;

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专利

1. Study of hot-carrier effects on power RF LDMOS device reliability [J] . M. Gares, M.A. Belaied, H. Maanane, Microelectronics & Reliability . 2007,第9a11期

机译：热载流子对功率RF LDMOS器件可靠性的影响研究
2. The role of cold carriers and the multiple-carrier process of Si-H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices [J] . Sharma Prateek, Tyaginov Stanislav, Jech Markus, Solid-State Electronics . 2016,第JANaPTaB期

机译：冷载子的作用和Si-H键解离的多载子过程对n和p沟道LDMOS器件中的热载子降解的影响
3. Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation [J] . Sharma Prateek, Tyaginov Stanislav, Wimmer Yannick, Electron Devices, IEEE Transactions on . 2015,第6期

机译：nLDMOS器件中热载流子退化的建模：解决玻耳兹曼输运方程的不同方法
4. Hot carrier reliability in LDMOS devices [C] . Jifa Hao IEEE International Conference on ASIC . 2017

机译：LDMOS设备中的热载波可靠性
5. Fundamentals and applications of the hydrogen/deuterium isotope effect in improved hot-carrier reliability of MOS devices. [D] . Cheng, Kangguo. 2001

机译：氢/氘同位素效应在提高MOS器件的热载流子可靠性方面的基础和应用。
6. Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices [O] . Zhaoliang Yang, Xiaomin Wang, Yuzhong Chen, -1

机译：光激发载流子的超快自陷为三硫化锑光伏器件设定了上限
7. Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation [O] . Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, 2015

机译：NLDMOS设备中热载波降解的建模：博尔兹曼运输方程解决方案的不同方法

Hot carrier reliability in LDMOS devices

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