NiGe metal source/drain Ge pMOSFETs for future high performance VLSI circuits applications

摘要

The source/drain (S/D) parasitic resistance is one of the critical issues limiting the application of high mobility Ge MOSFETs in high speed VLSI circuits. In order to overcome this disadvantage, a microwave annealing technique has been developed to fabricate the superior NiGe-Ge Schottky junctions, and replace the conventional p junctions in Ge MOSFETs. It is found that the Schottky barrier height in the microwave annealing NiGe-Ge Schottky junctions are significantly reduced to 0.03 eV for hole. On the other hand, the parasitic resistance in the NiGe-Ge Schottky junctions is also sufficiently suppressed. As a result, the high performance Schottky-barrier Ge p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been revealed.