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A detailed analysis of visible defects formed in commercial silicon thin-film modules during outdoor exposure

机译:详细分析室外暴露期间商用硅薄膜模块中形成的可见缺陷

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We analyzed defects in silicon thin-film tandem (a-Si:H/μc-Si:H) modules from an outdoor installation in India. The inspection of several affected modules reveals that most of the defects - which optically appear as bright spots - were formed primarily nearby the separation and series connection laser lines. Cross-sectional SEM analysis reveals that the bright spots emerge due to electrical isolation, caused by a delamination of the cell from the front TCO in the affected area. In addition, the morphology of the a-Si:H top cell differs in the delaminated area compared to the surrounding unaffected area. We propose that these effects are potentially caused by an explosive and thermally triggered liberation of hydrogen from the a-Si:H layer. Electrical and thermal measurements reveal that these defects can impact the cell performance significantly.
机译:我们分析了印度户外安装的硅薄膜串联(a-Si:H /μc-Si:H)模块中的缺陷。对几个受影响模块的检查表明,大多数缺陷-光学上显示为亮点-主要是在分离和串联激光线附近形成的。横截面SEM分析显示,亮点归因于电隔离,这是由于受影响区域中的电池与前TCO发生分层而引起的。此外,与周围未受影响的区域相比,a-Si:H顶部电池的形态在分层区域有所不同。我们认为这些影响可能是由爆炸性和热触发的氢从a-Si:H层中释放引起的。电学和热学测量表明,这些缺陷会严重影响电池性能。

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