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Tetris Write: Exploring More Write Parallelism Considering PCM Asymmetries

机译:俄罗斯方块写:考虑PCM不对称性探索更多的写并行性

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The noises at the power lines limit the charge pump to provide large instantaneous current to PCM cells, which results in the number of bits can be written concurrently, i.e. the size of write unit, is restricted in PCM. When implementing PCM as the main memory, the inequality of cache line's size and write unit's size may result in many consecutive executed write units, which greatly decreases the system performance. Existing PCM write schemes, however, consider the worst power and time cases of written data, and ignore the actual current consumption. It is assumed that all data bits are changed and the electric current of each data unit is under fully utilized. The write performance is blocked due to pessimistic estimates, i.e. the current is often excessively supplied but is not used effectively, which leads to huge energy consumption. As a result, the write parallelism is limited and therefore restricts the overall system performance. To address this problem, this paper proposes a novel PCM write scheme named Tetris Write to explore more write parallelism and reduce the critical number of write units in PCM chip. The key idea behind Tetris Write is to monitor the number of '1' and '0' changed in each data unit, and schedule the order of data units' write-1 and write-0 execution considering not only the time and power asymmetries, but also the number asymmetry between RET and SET operations, to allow a larger number of concurrent bit-writes and make the best use of power supply. Tetris Write tries to schedule the dominating long term write-1s first and attempts to steal interspaces remained by write-1s to put the extraessential short write-0s. 4-core PARSEC benchmarks' results show that Tetris Write can get 65% read latency reduction, 40% write latency reduction, 46% running time reduction and 2X IPC improvement compared with the baseline on average. In addition, Tetris Write earns 26%, 15% and 10% more read latency reduction, 15%, 7% and 5% more write latency reduction, and outperforms 22%, 12% and 7% more running time reduction, compared with the state-of-the-art Flip-N-Write, 2-Stage-Write and Three-Stage-Write schemes, whose IPC improvements are 1.4X, 1.6X and 1.8X, respectively.
机译:电力线上的噪声限制了电荷泵向PCM单元提供大的瞬时电流,这导致可以同时写入位数,即在PCM中限制了写入单元的大小。当将PCM用作主存储器时,高速缓存行大小和写入单元大小的不相等可能会导致许多连续执行的写入单元,这大大降低了系统性能。但是,现有的PCM写入方案考虑了写入数据的最坏功耗和时间情况,而忽略了实际电流消耗。假设所有数据位均已更改,并且每个数据单元的电流都未得到充分利用。由于悲观的估计,阻止了写性能,即,电流经常被过量供应,但是没有被有效地使用,这导致了巨大的能量消耗。结果,写入并行性受到限制,因此限制了整个系统的性能。为了解决这个问题,本文提出了一种新颖的PCM写入方案,称为Tetris Write,以探索更多的写入并行性并减少PCM芯片中写入单元的临界数量。 Tetris Write背后的关键思想是监视每个数据单元中已更改的“ 1”和“ 0”的数目,并计划数据单元的write-1和write-0执行顺序,不仅要考虑时间和功耗的不对称性,而且还需要进行RET和SET操作之间的数字不对称,以允许更多的并发位写入并充分利用电源。 Tetris Write尝试首先安排长期的长期write-1,并尝试窃取write-1保留的剩余空间以放置多余的短write-0。 4核PARSEC基准测试的结果表明,与平均水平相比,“俄罗斯方块写入”可以减少65%的读取延迟,减少40%的写入延迟,减少46%的运行时间并提高2倍IPC。此外,与俄罗斯方块相比,Tetris Write的读取延迟减少了26%,15%和10%,写入延迟减少了15%,7%和5%,并且运行时间减少了22%,12%和7%。最新的Flip-N-Write,2-Stage-Write和Three-Stage-Write方案,其IPC改进分别为1.4倍,1.6倍和1.8倍。

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