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Time and Space-Efficient Write Parallelism in PCM by Exploiting Data Patterns

机译:通过利用数据模式在PCM中节省时间和空间的并行写入

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摘要

The size of write unit in PCM, namely the number of bits allowed to be written concurrently at one time, is restricted due to high write energy consumption. It typically needs several serially executed write units to finish a cache line service when using PCM as the main memory, which results in long write latency and high energy consumption. To address the poor write performance problem, we propose a novel PCM write scheme called Min-WU (Minimize the number of Write Units). We observe data access locality that some frequent zero-extended values dominate the write data patterns in typical multi-threaded applications (more than 40 and 44.9 percent of all memory accesses in PARSEC workloads and SPEC 2006 benchmarks, respectively). By leveraging carefully designed chip-level data redistribution method, the data amount is balanced and the data pattern is the same among all PCM chips. The key idea behind Min-WU is to minimize the number of serially executed write units in a cache line service after data redistribution through sFPC (simplified Frequent Pattern Compression), eRW (efficient Reordering Write operations method) and fWP (fine-tuned Write Parallelism circuits). Using Min-WU, the zero parts of write units can be indicated with predefined prefixes and the residues can be reordered and written simultaneously under power constraints. Our design can improve the performance, energy consumption and endurance of PCM-based main memory with low space and time overhead. Experimental results of 12 multi-threaded PARSEC 2.0 workloads show that Min-WU reduces 44 percent read latency, 28 percent write latency, 32.5 percent running time and 48 percent energy while receiving 32 percent IPC improvement compared with the conventional write scheme with few memory cycles and less than 3 percent storage space overhead. Evaluation results of 8 SPEC 2006 benchmarks demonstrate that Min-WU earns 57.8/46.0 percent read/write latency reduction, 28.7 percent IPC improvement, 28 percent running time reduction and 62.1 percent energy reduction compared with the baseline under realistic memory hierarchy configurations.
机译:由于高的写入能量消耗,限制了PCM中的写入单元的大小,即一次允许同时写入的位数。当使用PCM作为主存储器时,它通常需要几个串行执行的写单元来完成高速缓存行服务,这导致较长的写延迟和高能耗。为了解决较差的写入性能问题,我们提出了一种新颖的PCM写入方案,称为Min-WU(最小化写入单位数)。我们观察到数据访问局部性,在典型的多线程应用程序中,某些频繁的零扩展值主导着写数据模式(在PARSEC工作负载和SPEC 2006基准中,分别占所有内存访问的40%和44.9%)。通过精心设计的芯片级数据重新分配方法,可以平衡所有PCM芯片中的数据量并且数据模式相同。 Min-WU背后的关键思想是,在通过sFPC(简化的频繁模式压缩),eRW(有效的重排序写操作方法)和fWP(微调的写并行度)进行数据重新分配之后,最大程度地减少高速缓存行服务中串行执行的写单元的数量。电路)。使用Min-WU,可以用预定义的前缀指示写入单元的零部分,并且可以在功率限制下同时对残差进行重新排序和写入。我们的设计可以以较小的空间和时间开销来提高基于PCM的主存储器的性能,能耗和耐用性。 12个多线程PARSEC 2.0工作负载的实验结果表明,与传统的写方案相比,只有很少的内存周期,Min-WU减少了44%的读取延迟,28%的写入延迟,32.5%的运行时间和48%的能耗,而IPC却提高了32%并且少于3%的存储空间开销。 8个SPEC 2006基准的评估结果表明,与实际内存层次结构配置下的基准相比,Min-WU的读取/写入延迟减少了57.8%/ 46.0%,IPC改善了28.7%,运行时间减少了28%,能耗减少了62.1%。

著录项

  • 来源
    《IEEE Transactions on Computers》 |2017年第9期|1629-1644|共16页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

    Wuhan National Laboratory for Optoelectronics, Key Laboratory of Information Storage System (School of Computer Science and Technology, Huazhong University of Science and Technology), Ministry of Education of China, Hubei, Sheng, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Phase change materials; Writing; Random access memory; Memory management; Energy consumption; Hardware; Parallel processing;

    机译:相变材料;写入;随机存取存储器;存储器管理;能耗;硬件;并行处理;

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