首页> 外文会议>International Conference on Ion Implantation Technology >Implantation mode dependence of damage structure depth profiles in Al{sub}2O{sub}3 irradiated with triple beam of H, He and heavy ions
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Implantation mode dependence of damage structure depth profiles in Al{sub}2O{sub}3 irradiated with triple beam of H, He and heavy ions

机译:Al {Sub} 2O {Sub} 3中造成损伤结构深度轮廓的植入模式依赖性,H He和Heavy离子辐照

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摘要

The damage structures in Al{sub}2O{sub}3 after triple ion beam (H, He and/or N, O) irradiation were examined with cross-sectional TEM. Heavier ions penetrating depths of He-and H-ions implantation enhanced growth of cavities produced by He- and H-ions, as compared with those produced by He-and H-ions only. Although peaks for He- and H-ion implantation distribution are predicted by TRIM calculation to coincide each other, cavity formation revealed the peaks to be separated appreciably.
机译:通过横截面温度检查三重离子束(H,He和/或N,O)照射后的Al {Sub} 2o} 3中的损伤结构。较重的离子渗透深度He-and H-ince植入深度增强了他和H-离子产生的空腔生长,与仅由He-and和H-离子产生的那些相比。尽管通过调节计算预测He-和H离子注入分布的峰值以彼此重合,但腔形成显示峰值明显地分离。

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