Creation of Quantum Centers in Silicon using Spatial Selective Ion Implantation of high Lateral Resolution

摘要

We report on our latest progress in spatial selective, high-resolution ion implantation for applications in quantum computing, sensor technology and photonics. On the basis of a well-known light-emitting defect in silicon, called G-center, we explain how our setups help to fabricate and investigate such optical centers for future generation techniques.