Room Temperature Photoluminescence Characterization of Very Low Energy and Low Dose F+ Implanted Silicon Wafers

摘要

We have developed a multi-wavelength, room temperature photoluminescence (RTPL) characterization technique and applied it for very low energy and low dose ion implantation process and equipment monitoring. We have tested the sensitivity and stability of the RTPL technique using 200mm p-type Si (100) wafers with 300eV F^{+ implantation in the dose range of 1.0 × 1011 cm?2 and 1.0 × 1012 cm?2 and found excellent correlation between RTPL intensity and F+ implant dose. We also verified that F+ implantation damage can be cured by subsequent thermal annealing. The RTPL technique is very promising as a practical means of very low energy and low dose ion implant process and equipment monitoring.}