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Photoluminescence emission from as-etched quantum nanodisks fabricated by bio-template and neutral beam etching process

机译:通过生物模板和中性束刻蚀工艺制备的刻蚀量子纳米盘的光致发光

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Quantum dot laser diodes are expected to replace conventional semiconductor laser diodes in new high-speed information and communication devices. We successfully fabricated disk-shaped quantum dots using a bio-template and neutral beam etching. Our original top-down process achieved defect-less and a high density of dots from etching process compared with conventional plasma processes. Therefore, we attempted to detect emission from the quantum energy levels in the quantum nanodisks (QNDs) for as-etched sample without post-fabrication process. We prepared 4-stacked GaAs/AlGaAs layer QNDs samples after etching (as-etched) and after regrowth. QNDs samples were investigated by photoluminescence (PL) measurements. Results showed some broad peaks appearing between the bandgaps of GaAs and AlGaAs. We compared our experimental results with energies theoretically estimated energies using a nextnano 3D simulator with QND different diameters. For both type of samples, we found that QND diameters increased from top to bottom. From PL measurement, we observed emission from QNDs for as-etched samples fabricated using our own original top-down process.
机译:量子点激光二极管有望在新型高速信息和通信设备中取代传统的半导体激光二极管。我们使用生物模板和中性束蚀刻成功地制造了盘状量子点。与传统的等离子工艺相比,我们的自上而下的自上而下工艺通过蚀刻工艺实现了无缺陷且高密度的点。因此,我们尝试在不进行后加工过程的情况下,针对蚀刻后的样品检测来自量子纳米盘(QND)中量子能级的发射。在蚀刻(蚀刻后)和再生长后,我们准备了4层GaAs / AlGaAs层QNDs样品。通过光致发光(PL)测量研究了QNDs样品。结果表明,在GaAs和AlGaAs的带隙之间出现了一些宽峰。我们使用QND不同直径的nextnano 3D模拟器将实验结果与理论上估计的能量进行了比较。对于这两种类型的样品,我们发现QND直径从上到下增加。通过PL测量,我们观察到使用我们自己的原始自顶向下工艺制造的蚀刻样品的QND发射。

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